学術雑誌論文

Publications (-1999)

(98) N. Sekine, K. Yamanaka, K. Hirakawa, M. Vosseburger, P. Haring-Bolivar, and H. Kurz: “Observation of terahertz radiation from higher-order two-dimensional plasmon modes in GaAs/AlGaAs single quantum wells”, Applied Physics Letters, vol. 74, No. 7, pp. 1006-1008 (1999).

(99) S.-W. Lee, K. Hirakawa, and Y. Shimada: “Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures”, Applied Physics Letters, vol. 75, No. 10, pp. 1428-1430 (1999).

(100)N. Sekine, K. Hirakawa, M. Vosseburger, P. Haring-Bolivar, and H. Kurz: “Excitation process of two-dimensional plasmons excited by femtosecond laser pulses”, Microelectronic Engineering, vol. 47, pp. 289-292 (1999).

(101)N. Sekine, K. Hirakawa, M. Vosseburger, P. Haring-Bolivar, and H. Kurz: “Coherent and incoherent excitation of two-dimensional plasmons in AlGaAs/Gas quantum wells by femtosecond laser pulses”, Inst. Phys. Conf. Ser., No. 162, pp. 845-848 (1999).

(102)平川一彦、川口　康、山中宏治、小宮山進: ”量子ホール効果を用いた超高感度遠赤外光検出”､応用物理､ vol. 68､ No. 9､ pp. 1027-1033 (1999).

(103)K. Tamura, K. Hirakawa, and Y. Shimada: “Drude absorption and electron localization in GaAs/AlGaAs superlattices”, Physica B, vol. 272, pp. 183-186 (1999).

(104)K. Yamanaka and K. Hirakawa: “Far infrared photoresponse of the diagonal magnetoresistance of the two-dimensional electron system near the n=1 spin-gap quantum hall state”, Physica Status Solidi (B), vol.204, pp. 310-313 (1998).

(105)R. A. Hogg, K. Suzuki, K. Tachibana, L. Finger, K. Hirakawa, and Y. Arakawa: “Optical spectroscopy of self-assembled type II GaSb/GaAs quantum dot structures grown by molecular beam epitaxy”, Applied Physics Letters, vol. 72, No. 22, pp. 2856-2858 (1998).

(106) N. Sekine, K. Hirakawa, and Y. Arakawa: “Terahertz emission from quantum beats in coupled quantum wells”, Japanese Journal of Applied Physics, vol. 37, part. 1, No. 3B, pp. 1643-1645 (1998).

(107)Y. Shimada, and K. Hirakawa: “Optical and transport properties of single quantum well infrared photodetectors”, Japanese Journal of Applied Physics, vol. 37, part 1, No. 3B, pp. 1421-1423 (1998).

(108)K. Yamanaka and K. Hirakawa: “Far-infrared photoresponse of the AlGaAs/GaAs low-dimensional systems constricted by split-gates”, Solid-State Electronics, vol. 42, No. 7-8, pp. 1151-1153 (1998).

(109)Y. Shimada and K. Hirakawa: “Photocurrent dynamics in single quantum well infrared photodetectors investigated by using free electron laser pulses”, Nuclear Instruments and Methods in Physics Research, B 144, pp. 166-171 (1998).

(110)H. Sakakibara and K. Hirakawa: “Interaction effects on cyclotron resonance in semiconductor double quantum well structures”, Physica B, vol. 249-251, pp. 855-858 (1998).

(111)Y. Shimada and K. Hirakawa: “Time constant for high-field domain formation in multiple quantum well sequential resonant tunneling diodes”, Japanese Journal of Applied Physics, vol. 36, part 1, No. 3B, pp. 1944-1947 (1997).

(112)Y. Shimada, and K. Hirakawa: “Sequential resonant magnetotunneling through landau levels in GaAs/AlGaAs multiple quantum well structures”, Physica Status Solidi (B), vol. 204, pp. 427-430 (1997).

(113)K. Hirakawa, I. Wilke, K. Yamanaka, H. G. Roskos, M. Vosseburger, F. Wolter, C. Waschke, H. Kurz, M. Grayson, and D. C. Tsui: “Coherent submillimeter-wave emission from non-equilibrium two-dimensional free carrier plasmas in AlGaAs/GaAs heterojunctions”, Surface Science, vol. 361/362, pp. 368-371 (1996).

(114)M. Vosseburger, H. G. Roskos, F. Wolter, C. Wacshke, H. Kurz, K. Hirakawa, I. Wilke, and K. Yamanaka: “Radiative decay of optically excited coherent plasmons in a two-dimensional electron gas”, Journal of the Optical Society of America B, vol. 13, No. 5, pp. 1045-1053 (1996).

(115)K. Hirakawa, Y. Shimada, and T. Ikoma: “Supply-function dependent sequential resonant tunneling in semiconductor multiple quantum well diodes”, Physica B, vol. 227, pp. 202-205 (1996).

(116) Y. Shimada, K. Hirakawa: “Condition for the high-field domain formation in semiconductor multiple quantum well sequential resonant tunneling structures”, Japanese Journal of Applied Physics, vol. 36, part 1, No. 3A, pp.1012-1014 (1996).

(117)平川一彦､　山中宏治、M. A. Grayson、D. C. Tsui: ”半導体ナノ構造中のホットな低次元電子系からの遠赤外放射”､固体物理､ vol. 31､ No. 4､ pp.277 – 286 (1996).

(118)N. Sekine, K. Hirakawa, F. Sogawa, Y. Arakawa, N. Usami, Y. Shiraki, and T. Katoda: “Ultrashort lifetime photocarriers in Ge thin films”, Applied Physics Letters, vol. 68, No. 24, pp.3419-3421 (1996).

(119)S.-N. Wang, K. Yamanaka, K. Hirakawa, M. Noguchi and T. Ikoma: “Direct determination of bare confinement potentials in AlGaAs/GaAs split-gate single quantum wires by far infrared spectroscopy”, Japanese Journal of Applied Physics (Part 2), vol.35, No.10A, pp. L1249-L1252 (1996).

(120)T. Ikoma, T. Hiramoto, and K. Hirakawa: “Gap between microelectronics and nanoelectronics”, Inst. Phys. Conf. Ser., vol. 145, pp. 23-28 (1996).

(121) 関根徳彦､　十川文博、平川一彦、荒川泰彦: ”集積化光伝導ダイポールアンテナによるテラヘルツ光の発生と検出”､電子情報通信学会論文誌 C-I､ vol. J79-C-I､ No. 11､ pp. 446-447 (1996).

(122)K. Hirakawa, M. Endo, K. Yamanaka, Y. Hisanaga, and S. Komiyama: “Giant negative far-infrared response of the diagonal magnetoresistance due to edge channel transport in the quantized Hall regime”, Proceedings of the 23rd International Conference on the Physics of Semiconductors, vol. 3, pp. 2543-2546 (1996).

(123)M. Grayson, D. C. Tsui, M. Shayegan, K. Hirakawa, R. A. Ghanbari, and H. I. Smith: “Far infrared emission from hot quasi-one dimensional quantum wires in GaAs”, Applied Physics Letters, vol. 67, No. 11, pp. 1564 – 1566 (1995).

(124) S. Suzuki, L. E. Henrickson, K. Hirakawa, and T. Ikoma: “Coherent transport through electron wave directional coupling structures”, Japanese Journal of Applied Physics part 1, vol. 34, No. 8B, pp. 4449 – 4451 (1995).

(125)K. Hirakawa, K. Yamanaka, M. Grayson, and D. C. Tsui: “Far infrared emission spectroscopy of hot two-dimensional plasmons in Al0.3Ga0.7As/GaAs heterojunctions”, Applied Physics Letters, vol. 67, No. 16, pp. 2326 – 2328 (1995).

(126)  N. Sakamoto, K. Hirakawa, and T. Ikoma: “Conduction-type conversion in Si-doped (311)A GaAs grown by molecular beam epitaxy”, Applied Physics Letters, vol. 67, No.10, pp. 1444 – 1446 (1995).

(127)J. J. Heremans, M. B. Santos, K. Hirakawa, and M. Shayegan: “Mobility anisotropy of two-dimensional hole systems in (311)A GaAs/AlxGa1-xAs heterojunctions”, Journal of Applied Physics, vol. 76, No. 3, pp. 1980-1982 (1994).

(128)K. Hata, T. Ikoma, K. Hirakawa, T. Okano, A. Kawazu, T. Ueda, and M. Akiyama: “Spontaneous appearance of high index facets during the evolution of step bunching on vicinal GaAs (001)”, Journal of Applied Physics, vol. 76, p. 5601 (1994).

(129)K. Agawa, K. Hirakawa, N. Sakamoto, Y. Hashimoto, and T. Ikoma: “Electrical properties of heavily Si-doped (311)A GaAs grown by molecular beam epitaxy”, Applied Physics Letters, vol. 65, No. 9, pp. 1171-1173 (1994).

(130)K. Agawa, Y. Hashimoto, K. Hirakawa, N. Sakamoto, and T. Ikoma: “Heavy p- and n-type doping with Si on (311)A GaAs substrates by molecular beam epitaxy”, IEICE Transactions on Electronics, vol. E77-C, No. 9, pp. 1408-1413 (1994).

(131)N. Sakamoto, K. Hirakawa, and T. Ikoma: “Conduction-type conversion in Si-doped (311)A GaAs grown by molecular beam epitaxy”, Applied Physics Letters, vol. 67, No. 10, pp. 1444-1446 (1994).

(132)K. Hirakawa, M. Grayson, D. C. Tsui, and C. Kurdak: “Blackbody radiation from hot two-dimensional electrons in AlxGa1-xAs/GaAs heterojunctions”, Physical Review B, vol. 47, No. 24, pp. 16651-16654 (1993).

(133)K. Hirakawa, Y. Zhao, M. B. Santos, M. Shayegan, and D. C. Tsui: “Anomalous cyclotron-resonance line splitting of two-dimensional holes in (311)A AlxGa1-xAs/GaAs heterojunctions”, Physical Review B, vol. 47, No. 7, pp. 4076-4079 (1993).

(134)T. S. Lay, J. J. Heremans. Y. W. Suen, M. B. Santos, K. Hirakawa, and M. Shayegan: “High-quality two-dimensional electron system confined in an AlAs quantum well”, Applied Physics Letters, vol. 62, No. 24, pp. 3120-3122 (1993).

(135)Y. Hashimoto, T. Saito, K. Hirakawa, and T. Ikoma: “Role of ultrathin Si layers inserted at GaAs/AlAs heterointerfaces”, Gallium Arsenide and Related Compounds 1992, Inst. Phys. Conf. Series, vol. 129, No. 259-264 (1993).

(136)K. Hirakawa, Y. Zhao, M. B. Santos, M. Shayegan, and D. C. Tsui: “Anomalous cyclotron resonance line splitting of two-dimensional holes in (311)A AlGaAs/GaAs heterojunctions”, Proceedings of 21st International Conference on the Physics of Semiconductors, pp. 911-914 (1993).

(137)Y. Zhao, D. C. Tsui, K. Hirakawa, M. Santos, M. Shayegan, R. A. Ghanbari, D. A. Antoniadis, and H. I. Smith: “Far infrared magneto-absorption by the 2DEG in GaAs/AlGaAs heterostructures with grid gates”, Proceedings of 21st International Conference on the Physics of Semiconductors, pp. 903-906 (1993).

(138)Y. Hashimoto, G. Tanaka, K. Hirakawa, and T. Ikoma: “Role of ultrathin Si layer in GaAs/AlAs heterostructure”, Proceedings of 21st International Conference on the Physics of Semiconductors, pp. 725-728 (1993).

(139)S. Y. Lin, K. Hirakawa, A. Zaslavsky, D. C. Tsui, and J. Klem: “Subband dispersion of holes in AlAs/In0.1Ga0.90As/AlAs strained-layer quantum wells measured by resonant magnetotunneling”, Applied Physics Letters, vol. 60, No. 5, pp.601-603 (1992).

(140)L.E. Henrickson, K. Hirakawa, J. Frey, and T. Ikoma: “Application of the tight-binding green’s function method to interface roughness in resonant tunneling heterostructures”, Journal of Applied Physics, vol. 71, No. 8, pp. 3883-3888 (1992).

(141)M. Yamada, K. Hirakawa, T. Odagiri, T. J. Thornton, and T. Ikoma: “Electron scatterers near the boundary in AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation”, Superlattice and Microstructures, vol. 11, No. 3, pp. 261-264 (1992).

(142)K. Hirakawa, Y. Hashimoto, and T. Ikoma: “Transient of microscopic valence charge distribution and electrostatic potential at GaAs/AlAs heterointerfaces”, Surface Science, vol. 267, pp. 166-170 (1992).

(143)M. Noguchi, K. Hirakawa, and T. Ikoma: “In-situ determination of electronic properties of clean GaAs (100) surfaces by high resolution electron energy loss spectroscopy”, Surface Science, vol. 271, pp. 260-276 (1992).

(144)G. Tanaka, K. Hirakawa, H. Ichinose, and T. Ikoma: “Atomically flat AlGaAs/GaAs(110) heterointerface grown by molecular beam epitaxy”, Gallium Arsenide and Related Compounds 1991, Inst. Phys. Conf. Series, No. 120, pp. 25-30 (1992).

(145)T. Odagiri, K. Hirakawa, and T. Ikoma: “Electron scattering in AlGaAs/GaAs hetero-quantum wires”, Quantum Effect Physics, Electronics and Applications, Inst. Phys. Conf. Series, No. 127, pp. 157-162 (1992).

(146)M. Noguchi, K. Hirakawa, and T. Ikoma: “Conductance oscillation in a quantum point contact of high-mobility hole gas”, Quantum Effect Physics, Electronics and Applications, Inst. Phys. Conf. Series, No. 127, pp. 179-182 (1992).

(147)M. Noguchi, K. Hirakawa, and T. Ikoma: “Intrinsic electron accumulation layers on reconstructed clean InAs (100) surfaces”, Physical Review Letters, vol. 66, No. 17, pp. 2243-2246 (1991).

(148)K. Hirakawa, Y. Hashimoto, K. Harada, and T. Ikoma: “Strain effect on band offsets at pseudomorphic InAs/GaAs heterointerfaces characterized by x-ray photoemission spectroscopy”, Physical Review B, vol. 44, No. 4, pp. 1734-1740 (1991).

(149)K. Hirakawa, Y. Hashimoto, K. Harada, and T. Ikoma: “Strain induced change in band offsets at pseudomorphically grown InAs/GaAs heterointerfaces characterized by X-ray photoelectron spectroscopy”, Journal of Crystal Growth, vol. 111, pp. 393-396 (1991).

(150)K. Hirakawa, Y. Hashimoto, and T. Ikoma: “Transient of electrostatic potential at GaAs/AlAs heterointerfaces characterized by x-ray photoemission spectroscopy (invited)”, Proceedings of SPIE, vol. 1361, pp. 255-261 (1991).

(151)K. Hirakawa, H. Sakaki, and T. Ikoma: “Electron-phonon interaction in GaAs/AlxGa1-xAs/GaAs single-barrier heterojunction diodes”, Surface Science, vol. 229, pp. 161-164 (1990).

(152)K Hirakawa, Y. Hashimoto, and T. Ikoma: “Orientation independence of heterojunction-band offsets at GaAs-AlAs heterointerfaces characterized by x-ray photoemission spectroscopy”, Applied Physics Letters, vol. 57, No. 24, pp. 2555-2557 (1990).

(153)K. Hirakawa, Y. Hashimoto, T. Saito, and T. Ikoma: “Direct experimental estimation of interface dipole effect of GaAs/AlAs heterojunction band offset by x-ray photoelectron spectroscopy”, Gallium Arsenide and Related Compounds ’89, Inst. Phys. Conf. Ser., IOP Publishing Ltd., vol. 106, pp. 345-350 (1990).

(154)X. -W. Zhao, K. Hirakawa, and T. Ikoma: “Diffusion and photoluminescence of erbium in GaAs and InP”, Gallium Arsenide and Related Compounds ’89, Inst. Phys. Conf. Ser., IOP Publishing Ltd., vol. 106, pp. 277-282 (1990).

(155)K. Hirakawa: “Tunneling spectroscopy of GaAs/AlxGa1-xAs/GaAs single-barrier heterojunction diodes”, Physical Review B, vol. 40, No. 5, pp. 3451-3454 (1989).

(156)T. Hiramoto, K. Hirakawa, T. Ikoma, and Y. Iye: “Anomalous drain conductance in quasi-one-dimensional AlGaAs/GaAs quantum wires”, Nanostructure Physics and Fabrication, Academic Press, pp. 176-182 (1989).

(157)T. Hiramoto, K. Hirakawa, Y. Iye, and T. Ikoma: “Phase coherence length of electron waves in narrow AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation”, Applied Physics Letters, vol. 54, No. 21, pp. 2103-2105 (1989).

(158)X. -W. Zhao, K. Hirakawa, and T. Ikoma: “Intracenter transition in triply ionized erbium ions diffused into III-V compound semiconductors”, Applied Physics Letters, vol. 54, No 8, pp. 712-714 (1989).

(159)J. Wakabayashi, A. Fukano, S. Kawaji, K. Hirakawa, H. Sakaki, Y. Koike, and T. Fukase: “Fractional quantum Hall Effect at n=1/7”, Journal of the Physical Society of Japan (1989).

(160)T. Hiramoto, T. Odagiri, K. Hirakawa, Y. Iye, and T. Ikoma: “Anomalous drain conductance in quasi-one-dimensional AlGaAs/GaAs quantum wire transisitors fabricated by focused ion beam implantation”, Proceedings of the 1st International workshop on Nanostructure Physics and Fabrication (1989).

(161)T. Hiramoto, K. Hirakawa, and T. Ikoma: “Fabrication of one-dimensinal GaAs wires by focused ion beam implantation”, Journal of Vacuum Science and Technology, vol. B6, No. 3, pp. 1014-1017 (1988).

(162)T. Hiramoto, K. Hirakawa, and T. Ikoma: “Quasi-one-dimensional planar GaAs wires fabricated by focused ion beam implantation”, Inst. Phys. Conf. Ser., No. 91: Chapter 5, pp. 431-434 (1988).

(163)K. Hirakawa, T. Noda, and H. Sakaki: “Interface roughness in AlAs/GaAs quantum wells characterized by the mobility of two-dimensional electrons”, Surface Science, vol. 196, No. 1-3, pp. 365-366 (1988).

(164)K. Hirakawa, and H. Sakaki: “Hot-electron transport in selectively doped n-type AlGaAs/GaAs heterojunctions”, Journal of Applied Physics, vol. 63, No. 3, pp. 803-808 (1988).

(165)H. Sakaki, J. Motohisa, and K. Hirakawa: “Roles of low field mobility and its carrier concentration dependences in high electron mobility transistors and other field effect transistors”, IEEE Electron Device Letters, vol. EDL-9, No. 3, pp. 133-135 (1988).

(166)J. Wakabayashi, S. Sudou, S. Kawaji, K. Hirakawa, and H. Sakaki: “Effects of the gate bias on the activation energies of the fractional quantum Hall effect”, Surface Science, vol. 196, No. 1-3, pp. 236-241 (1988).

(167)T. Hiramoto, K. Hirakawa, Y. Iye, and T. Ikoma: “One-dimensional GaAs wires fabricated by focused ion beam implantation”, Applied Physics Letters, vol. 51, No. 20, pp. 1620-1622 (1987).

(168)H. Sakaki, T. Noda, K. Hirakawa, M. Tanaka, and T. Matsusue: “Interface roughness scattering in GaAs/AlAs quantum wells”, Applied Physics Letters, vol. 51, No. 23, pp. 1934-1936 (1987).

(169)J. Wakabayashi, S. Sudou, S. Kawaji, K. Hirakawa, and H. Sakaki: “Second activation energy in the fractional quantum Hall effect”, Journal of the Physical Society of Japan, vol. 56, No. 9, pp. 3005-3008 (1987).

(170)K. Hirakawa, and H. Sakaki: “Energy relaxation of two-dimensional electrons and the deformation potential constant in selectvely doped AlGaAs/GaAs heterojunctions”, Proceedings of the 18th Intn’l Conf. on the Physics of Semiconductors, World Scientific, vol. 1, pp. 461-464 (1987).

(171)J. Wakabayashi, S. Sudou, S. Kawaji, K. Hirakawa, and H. Sakaki: “Activation energies of the 2/3 fractional quantum Hall effect in a GaAs/AlGaAs heterostructure with a backside gate”, Proceedings of the 18th Intn’l Conf. on the Physics of Semiconductors ’86 vol. 1, World Scientific, pp. 425-428 (1987).

(172)K. Hirakawa, T. Noda, and H. Sakaki: “Interface roughness in AlAs/GaAs quantum wells characterized by the mobility of two-dimensional electrons”, The 7th International Conference on Electronic of Two-Dimensional System (1987).

(173)T. Hiramoto, K. Hirakawa, and T. Ikoma: “Quasi-one-dimensional planar GaAs wires fabricated by focused ion beam implantation”, The 14th International Symposium on Gallium Arsenide and Related Compounds (1987).

(174)T. Hiramoto, K. Hirakawa, and T. Ikoma: “Fabrication of one-dimensinal GaAs wires by focused ion beam implantation”, Japan-USA Seminar on Focused Ion Beam Technoligy and Applications (1987).

(175)K. Hirakawa, and H. Sakaki: “Energy relaxation of two-dimensional electrons and the deformation potential constant in selectively doped AlGaAs/GaAs heterojunctions”, Applied Physics Letters, vol. 49, No. 14, pp. 889-891 (1986).

(176)K. Hirakawa, and H. Sakaki: “Mobility of the two-dimensional electron gas at selectively doped n-type AlxGa1-xAs/GaAs heterojunctions with controlled electron concentrations”, Physical Review, vol. B33, No. 12-I, pp. 8291-8303 (1986).

(177)K. Hirakawa, H. Sakaki, and J. Yoshino: “Electron concentration dependence of the two-dimensional electron mobilities in modulation doped AlGaAs/GaAs heterostructures”, Surface Science, vol. 170, pp. 440-444 (1986).

(178)K. Inoue, H. Sakaki, J. Yoshino, and K. Hirakawa: “Subband structures of high mobility electrons in selectively doped AlGaAs/GaAs/AlGaAs double heterojunction FET system”, Surface Science, vol. 174, pp. 382-386 (1986).

(179)T. Furuta, K. Hirakawa, J. Yoshino, and H. Sakaki: “Splitting of photoluminescence spectra and negative differential resistance caused by the electric field induced resonant coupling of quantized levels in GaAs-AlGaAs multi-quantum well structures”, Japanese Journal of Applied Physics, vol. 25, No. 2, pp. L151-L154 (1986).

(180)K. Inoue, H. Sakaki, J. Yoshino, and K. Hirakawa: “Subband structures of high mobility electrons in selectively doped AlGaAs/GaAs/AlGaAs double heterojunction FET system”, Surface Science, vol. 174, pp. 382-386 (1985).

(181)K. Hirakawa, H. Sakaki, and J. Yoshino: “Mobility modulation of the two-dimensional electron gas via controlled deformation of the electron wave function in selectively doped AlGaAs-GaAs heterojunctions”, Physical Review Letters, vol. 54, No. 12, pp. 1279-1282 (1985).

(182)K. Hirakawa, H. Sakaki, and J. Yoshino: “SUMMARY ABSTRATCT: Electron concentration in N-AlGaAs/GaAs heterojunction field effect transistors and its dependence on spacer layer thickness”, Journal of Vacuum Science and Technology, vol. B3, No. 2, pp. 798-799 (1985).

(183)K. Hirakawa, H. Nakamura, and M. Aoki: “Crystal growth of CuGaS2 from Te, Te-Cu, and Te-Cu-S solutions”, Japanese Journal of Applied Physics, vol. 24, No. 3, pp. 265-279 (1985).

(184)K. Hirakawa, H. Sakaki, and J. Yoshino: “Concentration of electrons in selectively doped GaAlAs/GaAs heterojunction and its dependence on spacer-layer thickness and gate electric field”, Applied Physics Letters, vol. 45, No, 3, pp. 253-255 (1984).

(185)H. Sakaki, K. Hirakawa, J. Yoshino, S. P. Svensson, Y. Sekiguchi, T. Hotta, S. Nishi, and N. Miura: “Effects of electron heating on the two-dimensional magnetotransport in AlGaAs/GaAs heterostructures”, Surface Science, vol. 142, No. 1-3, pp. 306-313 (1984).